DESIGN RESOURCE CENTER

  
Welcome! Please Log In
passwords are case sensitive
Forgot password?
Need an account?
Log In
MWE6IC9080NBR1 NXP Semiconductors
RF & MW Power Amplifier
MFG Part Number: MWE6IC9080NBR1
  
RF LDMOS Wideband Integrated Power Amplifiers. The MWE6IC9080N wideband integrated circuit is designed with on-chip matching that makes it usable from 865 to 960 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency865 MHz
Frequency Range : Maximum Frequency960 MHz
Gain28.5 dB
Gain Flatness±0.7 dB
Efficiency52.3 %
Supply Voltage28 VDC
P1dB49.54 dBm
Psat
Package TypeTO-272
Availability
391
Manufacturer Stock
2000
QuantityUnit Price
1 - 9
$61.53
10 - 24
$58.49
25 - 499
$55.74
500+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS