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MWE6IC9080GNR1 NXP Semiconductors
RF & MW Power Amplifier
MFG Part Number: MWE6IC9080GNR1
    
RF LDMOS Wideband Integrated Power Amplifiers. The MWE6IC9080N wideband integrated circuit is designed with on-chip matching that makes it usable from 865 to 960 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency865 MHz
Frequency Range : Maximum Frequency960 MHz
Gain28.5 dB
Gain Flatness±0.7 dB
Efficiency52.3 %
Supply Voltage28 VDC
P1dB49.54 dBm
Psat
Package TypeTO-270
Availability
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This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS