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MRF8S26060HSR5 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF8S26060HSR5
  
RF Power Field Effect Transistors, N-Channel Enhancement-Mode Lateral MOSFETs. Designed for W-CDMA and LTE base station applications with frequencies from 2620-2690 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency2620 MHz
Frequency Range : Maximum Frequency2690 MHz
P1dB60 W
P3dB
Gain16.3 dB
Pout15.5 W
Test signalW-CDMA
Efficiency32.9 %
Supply Voltage28 VDC
Thermal Resistance1 °C/W
Package NameNI-400
Package Type
Availability
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QuantityUnit Price
1 - 9
$40.64
10 - 24
$38.63
25 - 49
$36.81
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This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS