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MRF8P20100HSR3 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF8P20100HSR3
  
RF Power Field Effect Transistors, N-Channel Enhancement-Mode Lateral MOSFETs. Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency1805 MHz
Frequency Range : Maximum Frequency2025 MHz
P1dB78 W
P3dB126 W
Gain16 dB
Pout20 W
Test signalW-CDMA
Efficiency44.3 %
Supply Voltage28 VDC
Thermal Resistance0.88 °C/W
Package NameNI-780S
Package Type
Availability
780
Manufacturer Stock
5000
QuantityUnit Price
1 - 9
$55.66
10 - 24
$52.91
25 - 249
$50.42
250+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS