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MRF8S19140HSR5 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF8S19140HSR5
  
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RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency1930 MHz
Frequency Range : Maximum Frequency1990 MHz
P1dB138 W
P3dB
Gain19.1 dB
Pout34 W
Test signalW-CDMA
Efficiency31.4 %
Supply Voltage28 VDC
Thermal Resistance0.48 °C/W
Package NameNI-780
Package Type
Availability
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QuantityUnit Price
1 - 9
$78.25
10 - 24
$74.38
25 - 49
$70.88
50+Get Quote
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This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS