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MRF8P23080HSR3 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF8P23080HSR3
  
RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for W--CDMA and LTE base station applications with frequencies from 2300 to 2400 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency2300 MHz
Frequency Range : Maximum Frequency2400 MHz
P1dB55 W
P3dB100 W
Gain14.6 dB
Pout16 W
Test signalW-CDMA
Efficiency42 %
Supply Voltage28 VDC
Thermal Resistance0.91 °C/W
Package NameNI-780S
Package Type
Availability
110
QuantityUnit Price
1 - 9
$58.75
10 - 24
$55.85
25 - 249
$53.22
250+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS