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MRF8S26120HR5 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF8S26120HR5
    
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RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for W-CDMA and LTE base station applications with frequencies from 2620 to 2690 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency2620 MHz
Frequency Range : Maximum Frequency2690 MHz
P1dB110 W
P3dB
Gain15.6 dB
Pout28 W
Test signalW-CDMA
Efficiency31.1 %
Supply Voltage28 VDC
Thermal Resistance0.53 °C/W
Package NameNI-780
Package Type
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This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS