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MRF8S21100HSR3 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF8S21100HSR3
  
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N-Channel Enhancement-Mode Lateral MOSFETs. Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency2110 MHz
Frequency Range : Maximum Frequency2170 MHz
P1dB100 W
P3dB
Gain18.3 dB
Pout24 W
Test signalCW
Efficiency33.4 %
Supply Voltage28 VDC
Thermal Resistance0.48 °C/W
Package NameNI-780
Package Type
Availability
183
Manufacturer Stock
4000
QuantityUnit Price
1 - 9
$54.12
10 - 24
$51.44
25 - 249
$49.02
250+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS