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MMA20312BT1 NXP Semiconductors
RF & MW Power Amplifier
MFG Part Number: MMA20312BT1
  
Heterojunction Bipolar Transistor Technology (InCaP HBT); High Efficiency/Linearity Amplifier. The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femto cell or repeater applications. It is suitable for applications with frequencies from 1800 to 2200 MHz such as TD-SCDMA, PCS, UMTS and LTE. The amplifier is housed in a low-cost, surface mount QFN plastic package.
 
Key AttributesValue
TechnologyInGaP
Frequency Range : Minimum Frequency1800 MHz
Frequency Range : Maximum Frequency2200 MHz
Gain26.4 dB
Gain Flatness
Efficiency
Supply Voltage5 VDC
P1dB30.5 dBm
Psat
Package TypeQFN
Availability
20507
QuantityUnit Price
1 - 9
$3.58
10 - 24
$3.48
25 - 99
$3.25
100+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS