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MRFE6VP61K25HR5 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRFE6VP61K25HR5
  
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High Ruggedness N-Channel. Enhancement-Mode Lateral MOSFETs. These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency1.8 MHz
Frequency Range : Maximum Frequency600 MHz
P1dB1250 W
P3dB
Gain22.9 dB
Pout1250 W
Test signalCW
Efficiency74.6 %
Supply Voltage50 VDC
Thermal Resistance0.15 °C/W
Package NameNI-1230
Package Type
Availability
1566
Manufacturer Stock
5750
QuantityUnit Price
1 - 9
$225.42
10 - 24
$214.28
25 - 49
$204.20
50+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS