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Introducing two high performance, 11-/14-bit RF digital-to-analog converters (DACs) supporting data rates up to 2.8 GSPS, from Analog Devices. The DAC core is based on a quad-switch architecture that enables dual-edge clocking operation, effectively increasing the DAC update rate to 5.6 GSPS when configured for Mix-Mode™ or 2x interpolation. |
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Introducing new Freescale LDMOS RF Transistors for Land Mobile Radio. The first production devices released under Freescale's rapidly expanding portfolio of Airfast™ RF power products, these transistors are designed to meet the next generation of voice, video, and data services for first responders through the deployment of LTE networks, as well as the interoperability of Project 25 (P25). |
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This Nitronex Gallium Nitride 28V, 5W, DC-1500 MHz MMIC PA is built using the SIGANTIC®NRF1 process, a proprietary GaN-on-Silicon technology. It has an input and output matched to 50 Ohms.
NPA1003 Evaluation Board |
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These ultra low-profile antennas are made from flexible polymer and can be directly adhered to even the curved housings of a product. Connection is usually made by mechanical contact from the main-board; useful for applications where space is at a premium. |
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Cree’s second generation silicon carbide (SiC) MOSFET
reaches a price-performance point that enables systems to
have higher efficiency and smaller size at cost parity with
silicon-based solutions. |
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 Introducing a new E-band low noise amplifier and two power amplifiers from UMS. Operating from 71 to 86 GHz and available in chip form with BCB layer protection, they are ideally-suited for next generation telecommunication applications, including high capacity backhaul.
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