RF PIN Diode
The inherent electrical properties of RF PIN Diodes make them especially well suited for three main RF & Microwave applications: signal power limiting (signal limiters), switching, and signal level attenuation (diode-based variable attenuators).
Richardson RFPD offers a broad range of RF PIN Diodes, including some that can be employed in circuits with RF frequencies as high as70 GHz (mmW). The newest devices include AlGaAs anode-enhanced PIN Diodes, which can achieve switching speeds as low as 1 - 2 nanoseconds. Breakdown voltages can reach up to 3KV, and non-magnetic versions are available for MRI and other applications in high magnetic fields.
Specific attributes which are important in selecting the right RF PIN Diode for your application include Diode Configuration, Total Capacitance (pF), Frequency Range, Reverse Voltage (Vr), Series Resistance (Rs), and Package Type. The diode configuration attribute, which not only refers to the number of diodes in a given package but also to their orientation with respect to each other within the package, can include single diode, dual diode (common cathode, common-anode, Series Pair – Tee, Reverse Series Pair – Reverse Tee, parallel unconnected, parallel connected, etc.), Triple unconnected, Quad Ring, and many other configurations. Package styles include die, surface mount, beam lead, axial lead, and coaxial mount.
Richardson RFPD supplies RF PIN Diodes covering the various applications from industry-leading manufacturers M/A-COM Technology Solutions, and Microsemi.