LDMOS is the technology of choice for RF Power Transistors in applications where Gain, Linearity and Cost are the primary design considerations. For applications in frequency ranges below 3.5 GHz, and in RF power ranges from 5W to 1KW, LDMOS RF Power Transistors typically provide the best overall benefits of performance versus cost.
Specific attributes which are important in selecting the right LDMOS power transistor for your application include Frequency Range, P1dB (W), Gain (dB), Test Signal (CW, CDMA, EDGE, etc.), Power Added Efficiency (%), Supply Voltage, Thermal Resistance, and Package Type.
Richardson RFPD has partnered with industry-leading manufacturers Freescale SemiconductorTM, M/A-COM Technology Solutions, ST Microelectronics, and TriQuint Semiconductor to provide the best selection of LDMOS RF Power Transistors in the industry. Our supplier/partners cover the vast majority of the market for LDMOS RF Power Transistor products.
The parametric search filter allows the user to quickly find the parts they need by filtering the results in real-time.
Additionally, some attributes allow for the conversion of their base type to different types. For example, the attribute group for minimum frequency is shown in MHz. The values can be converted to be shown in KHz or GHz by selecting the conversion type from the ‘Select Conversion’ drop down list.
Any Attribute that does not interest the user can be hidden by clicking on the ‘X” in the upper-right corner of the attribute. To show any hidden attributes, simply click the ‘Unhide Attributes’ button in the bottom of the parametric search filter.
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