Unlike Power MOSFETs, Power FREDFET Transistors have a fast recovery body diode characteristic, providing fast switching (high commutation speeds), high dV/dt, enhanced ruggedness, very low switching losses, high reliability, and high efficiency. Additionally, Power FREDFET Transistors emit low levels of EMI (electro-magnetic interference), have typically low gate charge, and some FREDFETs are even avalanche energy rated.

Typical FREDFET applications include zero voltage switching (ZVS) circuits, power factor correction, solar power inverters, arc welding, plasma cutters, AM transmitters, Class D amplifiers, induction heating, plasma deposition, battery charging, and high-voltage pulsed DC circuits.

Specific attributes which are important in selecting the right Power FREDFET Transistor for your application include Voltage Rating (V), Current Rating (A), On-State Resistance (mΩ), and Package Type. Our Power FREDFETs feature a wide range of package types such as SOT-227 ISOTOP^®, T-Max^®, D3PAK, TO-247, etc.

Richardson RFPD offers an extensive selection of Power FREDFET Transistors from Microsemi.

ISOTOP^®and T-Max^®are registered trademarks of Microsemi Corporation.