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125W CW GaN on SiC HEMT
The MMRF5014H is a 125W continuous wave GaN on SiC transistor that offers leading drain efficiency and operational bandwidth, making it ideal for wideband amplifiers in scientific equipment, as well as in military applications including communications, electronic warfare/jammers and radar systems.

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10W RF Input-Matched GaN Transistor
The TGF3015-SM is a 10W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT that operates from 30 MHz to 3 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.

The PE42722 is a reflective SPDT SOI switch designed for use in cable CPE applications including DOCSIS 3.0 / 3.1 cable modem and set-top box. It provides high linearity, excellent harmonic performance, low insertion loss, and high isolation over 5–1794 MHz.

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100W PIN Diode SP3T Reflective Switch
The MASW-011030 operates from 30 MHz to 3 GHz and is capable of handling 100W CW incident power. It features low insertion loss and excellent linearity with low DC power consumption in a 7 mm HQFN plastic package.

HumDT™ Wireless UART Data Transceivers
Combining low cost with frequency agility, the HumDT Series transceivers can act as an access point, a range extender or an end device. The Hummingbird platform is the lowest cost-complete wideband transceiver with microcontroller module on the market today. Comprehensive development kits and evaluation modules are available.

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1.2kV, 80mΩ, All-SiC Six-Pack/Three-Phase Module & Six-Channel Gate Driver
The CCS020M12CM2 includes C2M™ MOSFETs and Z-Rec™ diodes and features ultra-low loss, high-frequency operation and zero reverse recovery current from the diodes. The CGD15FB45P is a six-channel gate driver evaluation fixture for Cree’s 1200V "CM2" series six-pack power modules.