Richardson RFPD Introduces New Airfast™ RF LDMOS Wideband Transistor for Mobile Radio Applications from NXP
6.0 W, 7.5 V transistor operates from 136 to 941 MHz
April 11, 2017 – Geneva, Ill.: Richardson RFPD, Inc. announced today the availability and full design support capabilities for a new RF power LDMOS transistor from NXP Semiconductors.
The AFM906NT1 is designed for handheld two-way radio applications with frequencies from
136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in handheld radio equipment.
Additional key features of the AFM906NT1 include:
- Supply voltage (typ.): 7.5 V
- P1dB (typ.): +37.8 dBm
- P1dB (typ.): 6 W
- Output power (typ.): 6.8 W
- Power gain (typ.): 20.3 dB @ 520 MHz
- Efficiency (typ.): 70.8%
To find more information, or to purchase this product today online, please visit the AFM906NT1 webpage. The device is also available by calling 1-800-737-6937 (within North America); or please find a local sales engineer (worldwide) at Local Sales Support. To learn about additional products from NXP, please visit the NXP storefront webpage.
About Richardson RFPD
Richardson RFPD, an Arrow Electronics company, is a global leader in the RF and wireless communications, power conversion and renewable energy markets. It brings relationships with many of the industry’s top radio frequency and power component suppliers. Whether it’s designing components or engineering complete solutions, Richardson RFPD’s worldwide design centers and technical sales team provide comprehensive support for customers’ go-to-market strategy, from prototype to production.
More information is available online at www.richardsonrfpd.com.
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