27-33.5 GHz 1.8 W Power Amplifier
The CHA6653-QXG from United Monolithic Semiconductors is a four-stage monolithic GaAs power amplifier producing 1.8 W output power. It is highly linear, with 20 dB controllable gain, 6 V bias, an integrated power detector, and ESD protection. It is designed for point-to-point radio applications and available in a SMD package.
Industrial IoT Remote Monitoring Solution
Exclusively available from Richardson RFPD, this bundled solution is a complete edge-to-cloud solution based on Sierra Wireless Octave and Microsoft Azure IoT Central. It offers quick, easily deployable, intelligent and reliable industrial IoT device connectivity, allowing companies to securely manage, extract, orchestrate and act on asset data.
Xinger®IV Directional Coupler for LTE and 5G Wireless Infrastructure
Part of Anaren's Xinger4 family, the X4C40K1-20S is a low-profile, high-performance 20 dB directional coupler in a new easy-to-use, manufacturing-friendly, "Atto"-sized surface mount package. It is designed for LTE and 5G wireless communications applications, including power and frequency detection and VSWR monitoring, where tightly controlled coupling and low insertion loss are required.
5 V, 10 A Synchronous Step-Down Silent Switcher 2
Analog Devices' LTC3310S is a very small, low noise, monolithic step-down DC/DC converter capable of providing up to 10A of output current from a 2.25 V to 5.5 V input supply. It employs Silent Switcher 2 architecture with internal hot loop bypass capacitors to achieve low EMI and high efficiency at switching frequencies as high as 5 MHz.
0.1-6.0 GHz High Isolation SPDT Switch
Skyworks' SKY13286-359LF is a GaAs high-isolation (64 dB at 1 GHz and 2 GHz, with 0.8 dB insertion loss) SPDT non-reflective switch that operates from 100 MHz to 6 GHz. It is an ideal component for base station applications in which synthesizer isolation is critical. The device is provided in a 4 x 4 mm, 16-pin QFN package..
0.05-26.5 GHz Non-Reflective SPDT Switch
MACOM's MASW-011128-DIE is a broadband non-reflective SPDT switch offered as bare die. It operates from 0.05 to 26.5 GHz and provides less than 2 dB insertion loss and 50 dB isolation. The combination of broadband performance, 15 ns switching and excellent settling time makes this device suitable for a range of applications including T&M and EW.
SiC MOSFET Modules
Microchip's SiC MOSFET modules offer breakthrough technology that combines high performance with low losses. Key benefits include high-speed switching, low switching losses, low-input capacitance, high-power density, low-profile packages, minimum parasitic inductance, lower system cost, standard and custom modules, and 30+ years of design experience.
12.5 W, 30-2700 MHz Single Match, Gan HEMT
Tagore Technology's TA9210D is a 12.5 W GaN on silicon power transistor covering 30 MHz to 2.7 GHz with a single match. It is usable up to 4 GHz. The input and output can be matched for best power and efficiency for the desired band. The TA9210D is available in a compact, low-cost QFN plastic package.