Rugged LDMOS

Our portfolio of Rugged LDMOS RF Transistors spans 1.8-2000 MHz and 25 – 1250W of output power, offering industry-leading ruggedness, efficiency and gain for a wide range of Industrial, Scientific, Medical, Broadcast, and Land Mobile RF power amplifier applications.

Please browse our Rugged LDMOS product categories, below, as well as the application notes and white papers included in the Technical Resources section. And please do not hesitate to contact us for design assistance.

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Semiconductors - Discretes

Semiconductors - ICs

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Rugged LDMOS is the culmination of several enhancements to LDMOS RF transistors, providing higher power density (up to 1.25kW), higher VSWR ratings (65:1), and integrated ESD protection with greater negative gate-source voltage range for improved Class C operation. These new features are enabling more efficient architectures for several applications including RF Industrial, Scientific, Medical, Broadcast, Military Communications, and Land Mobile Radio.

Richardson RFPD employs more RF engineers than any global distributor. By offering deep technical expertise to support the latest products from the leading suppliers in RF & Wireless and Energy Technologies, we are uniquely positioned to help customers meet the challenges of changing markets.

For more detailed information on this technology, please refer to the technical articles and design considerations found in the Technical Resources tab.