The 1011GN-1000V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 19 dB gain, 1000 Watts of pulsed RF output power at ELM pulse format across the 1030 to 1090 MHz band. The transistor has internal pre-match for optimal performance. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.