The 1011GN-800V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 19 dB gain, 800 Watts of pulsed RF output power at ELM pulse format across the 1030 MHz to 1090 MHz avionic band. The transistor has internal pre-matching for optimal performance. This hermetically sealed transistor is specifically designed for IFF & Mode-S ELM avionics applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.