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Silicon Carbide Power MOSFET
C3MTM MOSFET Technology Features
- C3MTM SiC MOSFET technology
- Optimized package with separate driver source pin
- 8mm of creepage distance between drain and source
- High blocking voltage with low On-resistance
- High speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS compliant
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Reduce cooling requirements
- Increase power density
- Increase system switching frequency
- EV charging
- Solar inverters
- UPS
- SMPS
- DC/DC converters
Change Notice
Datasheets
Supplier Documentation