15W L-Band Driver. GaN HEMT on Sic in SMD leadless package. The CHZ015A-QEG is an input matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. The circuit is well suited for pulsed radar application. The CHZ015A-QEG is proposed on a 0.5um gate length GaN HEMT process. It is based on Quasi MMIC technology. It is supplied in RoHS compliant SMD package