The GS-065-011-1-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology cell layout for high-current die performance and yield. The GS-065-011-1-L is a bottom-side cooled transistor in a 5x6 mm PDFN package that offers low junction-to-case thermal resistance. These features combine to provide very high efficiency power switching.
- Ultra-low FOM Island Technology Die
- Small 5x6 mm PDFN package
- Easy gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V/+10 V)
- Very high switching frequency (> 20 MHz)
- Fast and controllable fall and rise times
- Source Sensepad for optimized gate drive
- Reverse current capability
- Zero reverse recovery loss
- RoHS 6 compliant
- Power adaptors
- LED lighting drivers
- Fast battery charging
- LLC converters
- Power Factor Correction
- Appliance motor drives
- Wireless power transfer
- Industrial power supplies
Datasheets