IMS2 platform gate drive motherboard
This horizontal Insulated Metal Substrate (IMS) evaluation platform can be used to evaluate the electrical and thermal performance benefits of GaNPX® bottom-side cooled E-HEMTs in high power applications.
The optimized thermal and electrical designs provide a excellent reference for implementing a low cost, high performance design.Features and benefits
- Enhanced thermal and mechanical design
- Ultra low inductance, bottom-cooled GaNPX® package
- Minimizing parasitic elements of the power and gate drive loops via magnetic flux-cancellation
- High performance switching with low EMI
- Scalable and parallelable GaNPX® packaging for applications up to 100 kW
- Low cost thermal solution for high power applications.