The HMC1132PM5E is a four-stage, gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC) power amplifier. The device operates from 27 GHz to 32 GHz, providing 24 dB of gain and 29.5 dBm of saturated output power from a 5 V power supply.
The HMC1132PM5E exhibits excellent linearity with high output third-order intercept (IP3) of 37 dBm, and it is optimized for high capacity, point to point and point to multipoint radio systems. The amplifier configuration and high gain make the HMC1132PM5E an ideal candidate for last stage signal amplification before the antenna.
The HMC1132PM5E amplifier input/outputs (I/Os) are internally matched to 50 Ω. The device is housed in a RoHS compliant, premolded cavity, 5 mm × 5 mm LFCSP package, making the device compatible with high volume surface-mount technology (SMT) assembly equipment.