Single Diode Configuration: MA4AGP907 and MA4AGFCP910 are Aluminum Gallium Arsenide (AlGaAs) flip-chip PIN diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit an extremely low RC product, (0.1ps) and 2-3ns switching characteristics. They are fully passivated with silicon nitride and have an added polymer layer for scratch protection. The protective coating prevents damage to the junction and the anode air-bridge during handling and assembly. The ultra low capacitance of the MA4AGP907 and MA4AGFCP910 allows their use through millimeter frequencies for RF switches and switched phase shifter applications. The diodes are designed for use in pulsed or CW applications, where single digit ns switching speed is required. For surface mount assembly, the low capacitance of these switches make them ideal for use in microwave multi-throw switch assemblies, where the series capacitance of each off port adversely loads the input and affects VSWR.