The MA4BN1840-1 is a fully monolithic broadband bias network utilizing MACOM’s HMIC^TM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the formation of silicon vias by imbedding them in low loss, low dispersion glass along with high Q spiral inductors and MIM capacitors. The close proximity between elements and the combination of silicon and glass gives this HMIC device low loss and high performance with exceptional repeatability through millimeter frequencies.

Large bond pads facilitate the use of low inductance ribbon bonds, while the gold backside metallization provides the RF and DC ground. This allows for manual or automatic die attach via electrically conductive silver epoxy or RoHS compliant solders.

The MA4BN1840-1 bias network is ideally suited for the DC biasing of PIN diode control circuits. It functions as an RF-DC de-coupling network as well as the DC return. The device can also be used as a bi-directional re-active coupler for Schottky detector circuits. DC currents up to 150 mA and DC voltages up to 50 V may be used.