Single Diode Configuration: This device is a silicon-glass PIN diode chip fabricated with MACOM's patented HMIC™ process. This device features two silicon pedestals embedded in a low loss glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls conductive. Selective backside metallization is applied producing a surface mount device. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly. These packageless devices are suitable for usage in moderate incident power (10 W C.W.) or higher incident peak power (500 W) series, shunt, or series-shunt switches. Small parasitic inductance, 0.35 nH, and excellent RC time constant, 0.22 pS, make the devices ideal for wireless TR switch and accessory switch circuits, where higher P1dB and IP3 values are required. These diodes can also be used in p, T, tapered resistance, and switched-pad attenuator control circuits for 50W or 75W systems.