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RF LDMOS Wideband Integrated Power Amplifier. The MMRF2004NB wideband integrated circuit is designed with on-chip matching that makes it usable from 2300 to 2700 MHz. This multi-stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.
Application Notes
Freescale Thermal Measurement Methodology of RF Power Amplifiers
Freescale Using Data Sheet Impedances for RF LDMOS Devices
Quiescent Current Control for RFIC Device Family
Quiescent Current Thermal Tracking Circuit in the RFIC Family
Freescale Bolt Down Mounting Method for High Power RF Transistors
Datasheets