The PE29101 integrated high-speed driver is designed to control the gates of external power devices, such as enhancement mode gallium nitride (GaN) FETs. The outputs of the PE29101 are capable of providing switching transition speeds in the sub-nanosecond range for switching applications up to 40 MHz. High switching speeds result in smaller peripheral components and enable new applications such as wireless power charging.

To showcase the GaN-enabling capabilities of this driver, pSemi developed an evaluation kit with GaN Systems.

The GaN Systems GS61008P-EVBHF evaluation board allows the user to evaluate the PE29101 gate driver in a half-bridge configuration typically used in buck converters.

For more information on the GS61008P-EVBHF evaluation board, please visit this page

• High- and Low-side FET drivers
• Dead-time control
• Fast propagation delay, 11ns
• Internal gate overvoltage management
• Sub-nanosecond rise and fall time
• 2A/4A peak source/sink current
• Package – Flip chip

• DC–DC conversions
• AC–DC conversions
• Wireless power
• LiDAR

See PE29101A-X for 500-piece reel

See PE29101EK for evaluation kit