The MRFX1K80H is based on NXP’s Xtra High Voltage LDMOS technology, designed for drain voltages up to 65V. This technology enables; fewer transistors to combine in high power systems, ease of matching to 50 Ohms, lower overall system losses, and further improvements in ruggedness. This device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8-400 MHz.
Note: The PRFX1K80HR5 is currently being sampled with production expected in August 2017. Reference circuits for 27 MHz and 87.5-108 MHz applications are available upon request. The over-molded plastic version (MRFX1K80N) will be available in the next few months. For additional information please visit this page