The SUMMIT 2629 integrates novel power amplifiers, low noise amplifiers, T/R switching, beamformers, calibration, gain control, beam table memory, temperature and power telemetry, and high-speed SPI control for a front-end module with optimal partitioning for 5G infrastructure. The SUMMIT 2629 operates from 26.5-29.5 GHz and is the first of a family of MixComm mmWave devices.

MixComm SUMMIT 2629 Product Highlights:

• Industry leading efficiency more than 2X better than existing solutions
• Four-element Dual-pol. TX/RX with Independent Polarization Beam Directions
• High-Power, High-Efficiency SOI CMOS Power Amplifiers
• State-of-the-art Low-Noise Amplifiers and Low-Loss T/R Switching
• Ultra-low Transmit and Receive-Mode Power Consumption
• 6-bit full-360 degree Phase Shifting and 0.5dB-step 16dB-range Variable Gain in Each Path
• Fully calibrated for Gain/Phase Matching Across ICs
• Extensive On-chip Temperature and Power Sensing
• On-chip Gain Control for Temperature Compensation
• High-Speed SPI with Large On-Chip Beam Table Storage
• Wafer-Level Chip-Scale Package (WLCSP) compatible with low-cost PCB manufacturing
• Support for Large-Scale Arrays through Multiple Chip-Addressing Modes