18.0-25.0 GHz GaAs MMIC Receiver. XR1006-V has a noise figure of 2.5 dB and 15.0 dB image rejection across the band. This device is a two stage balanced LNA followed by an image reject sub-harmonic anti-parallel diode mixer and includes an integrated LO buffer amplifier. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. The use of a sub- harmonic mixer makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.