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Image | Item | Mfg Part # | Mfg | Description | Datasheet | Availability | Min/Mult | Price (US Stock) | Quantity | Technology | Minimum Frequency (MHz) | Maximum Frequency (MHz) |
P1dB (W) |
P3dB (W) |
Gain (dB) |
Pout (W) |
Test signal |
Efficiency (%) |
Supply Voltage (VDC) |
Thermal Resistance (°C/W) |
Package Name | Package Type | ||||||||||||
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2731GN-400V
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2731GN-400V | Microsemi | RF Power Transistor | Request Quote for Lead Time | 1 | Call RFPD |
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GaN | 2700 | 3100 | 15 | 400 | Pulsed | 58 | 50 | 0.28 | 55Q03 | |||||||||||||||||
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2931-10MQGM | 2931-10MQGM | STMicroelectronics | RF Power Transistor | Request Quote for Lead Time | 1 | Call RFPD |
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MOSFET | |||||||||||||||||||||||||
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2N2857CSM | 2N2857CSM | TT Electronics - Semelab | RF Power Transistor | Request Quote for Lead Time | 1 | Call RFPD |
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Bipolar/HBT | |||||||||||||||||||||||||
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2N5913 | 2N5913 | STMicroelectronics | RF Power Transistor | Request Quote for Lead Time | 1 | Call RFPD |
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Bipolar/HBT | |||||||||||||||||||||||||
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2N6439
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2N6439 | MACOM Technology Solutions | RF Power Transistor | Request Quote for Lead Time | 1 |
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Bipolar/HBT | 225 | 400 | 7.8 | 60 | CW | 55 | 28 | 1.2 | Ceramic | ||||||||||||||||
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2N6439/SD | 2N6439 | MACOM Technology Solutions | RF Power Transistor | Request Quote for Lead Time | 1 | Call RFPD |
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Bipolar/HBT | 225 | 400 | 8.5 | 60 | CW | 55 | 28 | 1.2 | |||||||||||||||||
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2N6439MP | 2N6439MP | MACOM Technology Solutions | RF Power Transistor | Request Quote for Lead Time | 1 | Call RFPD |
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Bipolar/HBT | 225 | 400 | 7.8 | 60 | CW | 55 | 28 | 1.2 | Ceramic | ||||||||||||||||
3135GN-120V | 3135GN-120V | Microsemi | RF Power Transistor | Request Quote for Lead Time | 1 | Call RFPD |
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GaN | 3100 | 3500 | 17.5 | 120 | Pulsed | 65 | 50 | 1.14 | 55QP | |||||||||||||||||
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3135GN-170
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3135GN-170M | Microsemi | RF Power Transistor | Request Quote for Lead Time | 5/1 | Call RFPD |
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GaN | |||||||||||||||||||||||||
3135GN-200V | 3135GN-200V | Microsemi | RF Power Transistor | Request Quote for Lead Time | 1 | Call RFPD |
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GaN | 3100 | 3500 | 14.5 | 200 | Pulsed | 58 | 50 | 0.56 | 55QP | |||||||||||||||||
3135GN-280LV | 3135GN-280LV | Microsemi | RF Power Transistor | Request Quote for Lead Time | 1 | Call RFPD |
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GaN | 3100 | 3500 | 13.5 | 280 | Pulsed | 60 | 50 | 0.39 | 55KP | |||||||||||||||||
3135GN-400V
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3135GN-400V | Microsemi | RF Power Transistor | Request Quote for Lead Time | 1 | Call RFPD |
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GaN | 3100 | 3500 | 14 | 400 | Pulsed | 50 | 50 | 0.3 | 55Q03 | |||||||||||||||||
3942GN-120V
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3942GN-120V | Microsemi | RF Power Transistor | Request Quote for Lead Time | 1 | Call RFPD |
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GaN | 3900 | 4200 | 15 | 120 | Pulsed | 62 | 50 | 0.92 | 55QP | |||||||||||||||||
4450GN-110V | 4450GN-110V | Microsemi | RF Power Transistor | Request Quote for Lead Time | 1 | Call RFPD |
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GaN | 4400 | 5000 | 12.5 | 110 | Pulsed | 65 | 50 | 0.98 | 55QP | |||||||||||||||||
5359GN-120V
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5359GN-120V | Microsemi | RF Power Transistor | Request Quote for Lead Time | 1 | Call RFPD |
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GaN | 5300 | 5900 | 11 | 120 | Pulsed | 40 | 50 | 0.55 | 55QP | |||||||||||||||||
5359GN-70V
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5359GN-70V | Microsemi | RF Power Transistor | Request Quote for Lead Time | 1 | Call RFPD |
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GaN | 5300 | 5900 | 11 | 120 | Pulsed | 42 | 50 | 0.55 | 55QP | |||||||||||||||||
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64054H
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80-64054H | Microsemi | RF Power Transistor | Request Quote for Lead Time | 1 | Call RFPD |
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Bipolar/HBT | |||||||||||||||||||||||||
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64073
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64073 | Microsemi | RF Power Transistor | 35 | 1 |
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Bipolar/HBT | |||||||||||||||||||||||||
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A2G22S160-01SR3
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A2G22S160-01SR3 | NXP Semiconductors | RF Power Transistor | Request Quote for Lead Time | 250/1 |
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GaN | 1800 | 2200 | 125 | 160 | 19.6 | 32 | W-CDMA | 38 | 48 | 1.7 | NI-400S-2S | ||||||||||||||
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A2G22S251-01SR3
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A2G22S251-01SR3 | NXP Semiconductors | RF Power Transistor | Request Quote for Lead Time | 250/1 |
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GaN | 1805 | 2200 | 158 | 195 | 17.7 | 48 | W-CDMA | 37.5 | 48 | 1.3 | NI-400S-2S | ||||||||||||||
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A2G26H280-04SR3
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A2G26H280-04SR3 | NXP Semiconductors | RF Power Transistor | Request Quote for Lead Time | 250/1 | Call RFPD |
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A2G26H281-04SR3
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A2G26H281-04SR3 | NXP Semiconductors | RF Power Transistor | Request Quote for Lead Time | 250/1 |
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GaN | 2496 | 2690 | 251 | 14.4 | 50 | W-CDMA | 58 | 48 | 1.77 | NI-780S-4L | |||||||||||||||
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A2G35S160-01SR3
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A2G35S160-01SR3 | NXP Semiconductors | RF Power Transistor | Request Quote for Lead Time | 250/1 |
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GaN | 3400 | 3600 | 126 | 162 | 15.7 | 32 | W-CDMA | 36.7 | 48 | 1.9 | NI-400S-2S | ||||||||||||||
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A2G35S200-01SR3
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A2G35S200-01SR3 | NXP Semiconductors | RF Power Transistor | 119 | 1 |
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GaN | 3400 | 3600 | 180 | 225 | 16.1 | 40 | W-CDMA | 35.3 | 48 | 1.75 | NI-400S-2S | ||||||||||||||
A2T07D160W04SR3
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A2T07D160W04SR3 | NXP Semiconductors | RF Power Transistor | 498 | 250/1 |
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LDMOS | 716 | 960 | 79 | 21.5 | 30 | W-CDMA | 48.5 | 28 | 0.63 | NI-780S-4L |