GaN Systems - GSEVBHB61008PON

100V High-Speed GaN Half-Bridge Evaluation Board
RFPD
100V High-Speed GaN Half-Bridge Evaluation Board

100V High-Speed GaN Half-Bridge Evaluation Board

Mfg Part No: GS-EVB-HB-61008P-ON

The GS-EVB-HB-61008P-ON evaluation board consists of NCP51810 gate drive solution with two GS61008P GaN E-mode transistors in a fully-functional half bridge. It allows users to easily evaluate GaN in a robust and simplified layout with NCP51810 gate driver, for a high cost-effective solution. This evaluation board provides the utmost flexibility of GaN transistors and driver combination and can be used in any topology that requires the use of a high−side/low−side FETs.

Order Now
GaN Sytems Logo

Related Content

Energy & Power Design Support

Allow us an opportunity to assess your project and help bring your vision to market faster.

Ask an Expert

About our Team of Experts

Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.
 
Richardson RFPD Logo

Helpful Links