GaN E-HEMT fast switching, low Coss, and zero QRR enables a new level of performance for Class D Audio amplifiers. This GaN-based EVB platform provides an excellent reference design for implementing a high performance, low cost audio system. The Class D amplifier and companion power supply designs are optimized for sound quality, thermal performance, size, and cost. Includes:
2-channel Class D Amplifier
- 200W per Channel into 8 Ohm
- 300W per Channel into 4 Ohm
- < 0.01% THD+N (8Ω, 1W, 20Hz to 20kHz)
- 20Hz‐20kHz +/‐0.5dB Freq. Response (8 Ohm)
- Bridge-Tied-Load (BTL) design
Companion Switch Mode Power Supply
- Complete Stand‐alone Dual‐Rail LLC SMPS
- 400W Continuous Duty, 550W Peak Power
- GaN PFC and Half‐Bridge LLC Topology
- Fully‐Regulated, Split‐Rail Outputs
- No heatsinking, no cooling
- EMI/EMC friendly
Related Content
650 V Half-Bridge Bipolar Driver Switch Board
The GS-EVB-HB-0650603B-HD from GaN Systems is a 650 V GaN E-Mode half-bridge evaluation board featuring HEY1011-L12C gate drive solution with two 650V, 60A GaN E-mode transistors in a fully-functional configuration.
250W AC/DC Charger PFC and LLC
New Reference Design: GaN Systems 250W AC/DC Charger PFC and LLC
300 W, 6.79 MHz Class EF2 PA for Wireless Power Applications
Evaluation Board In Stock: 300 W, 6.79 MHz Class EF2 PA for Wireless Power Applications
