GaN Systems - GS-EVB-AUD-BUND

GaN Audio Class D Evaluation Boards
GaN Systems: GS-EVB-AUD-BUND

GaN Systems: GS-EVB-AUD-BUND

Mfg Part No: GS-EVB-AUD-BUNDLE1-GS

In the defense industry, communication is not just necessary it’s a lifeline. NXP’s RF transistors are proven rugged and reliable in the harshest of environments.

The MMRF5018HSR5 is now in production and available for orders. The new MMRF5018HSR5 wideband RF 125 W CW power transistor is for optimized wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and wideband RF applications.

Features

  • Superior sound quality through reduced THD and increased bandwidth
  • High efficiency due to lower transistor switching and conduction losses
  • Reduced size and weight from high switching frequencies
  • Low cost implementation through simplified design
  • Low EMI/EMC due to high performance switching
  • 2 channel, BTL amplifier designed for configurability and scalability
  • Scalable 75-500W companion split rail PSU optimized for use with Amplifier
  • Applications

  • Automotive: 3.3kW-22kW on board charger, DC/DC, 3-phase inverter, high power wireless charger
  • Industrial: 3-7kW Photovoltaic Inverter and Energy Storage System (ESS), Motor Drive / VFD
  • Server/Datacenter: 3kW Server ACDC power supply.
  • Consumer: Residential Energy Storage System (ESS)
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    Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.