GaN Power Transistor Test/Evaluation

From GaN Systems
In Stock: New 650V GaN High Power IMS3 Half-Bridge Evaluation Board

In Stock: New 650V GaN High Power IMS3 Half-Bridge Evaluation Board

Mfg Part No: GS-EVB-IMS3-0650603B-GS

In the defense industry, communication is not just necessary it’s a lifeline. NXP’s RF transistors are proven rugged and reliable in the harshest of environments.

The MMRF5018HSR5 is now in production and available for orders. The new MMRF5018HSR5 wideband RF 125 W CW power transistor is for optimized wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and wideband RF applications.


  • Improved heat transfer
  • Increased power density
  • Reduced system cost
  • High thermal conductivity (7.0 W/mK)
  • IMS3 half bridge power boards are available in 2 power levels: 3 kW and 6 kW
  • Applications

  • Automotive: 3.3kW-22kW on board charger, DC/DC, 3-phase inverter, high power wireless charger
  • Industrial: 3-7kW Photovoltaic Inverter and Energy Storage System (ESS), Motor Drive / VFD
  • Server/Datacenter: 3kW Server ACDC power supply.
  • Consumer: Residential Energy Storage System (ESS)
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