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GaN Systems - GS66516B-MR
Leverage the Benefits Over Silicon

GaN in Stock: 650 V, 60 A Enhancement Mode GaN Power Transistor

The GS66516B is an enhancement mode gallium nitride (GaN) on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS66516B is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • 650 V enhancement mode power transistor
  • Bottom-side cooled configuration
  • RDS(on) = 25 mΩ
  • IDS(max) = 60 A
  • Ultra-low FOM die
  • Low inductance GaNPX® package
  • Simple drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 V / +10 V)
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 11 x 9 mm2 PCB footprint
  • Source Sense (SS) pins for optimized gate drive
  • Dual Gate Pins for optimal paralleling
  • RoHS 3 (6 + 4) compliant
  • AC-DC Converters
  • DC-DC Converters
  • Bridgeless Totem Pole PFC
  • Inverters
  • Energy Storage Systems
  • On Board Battery Chargers
  • Uninterruptable Power Supplies
  • Solar Energy
  • Industrial Motor Drives
  • Laser Drivers
  • Traction Drive
  • Wireless Power Transfer

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Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.