- Mfg Part Number: GS66508T-MR
The GS66508T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance & low thermal resistance in a small package. The GS66508T is a top-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
- Features
- 650 V enhancement mode power transistor
- Top-side cooled configuration
- RDS(on) = 50 mΩ
- IDS(max) = 30 A
- Ultra-low FOM die
- Low inductance GaNPX® package
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 / +10V)
- Very high switching frequency (> 10 MHz)
- Fast and controllable fall and rise times
- Reverse current capability
- Zero reverse recovery loss
- Small 7.0 x 4.5 mm2 PCB footprint
- Dual gate pads for optimal board layout
- RoHS 3 (6+4) compliant
- Applications
- AC-DC Converters
- DC-DC Converters
- Bridgeless Totem Pole PFC
- Inverters
- Energy Storage Systems
- On Board Battery Chargers
- Uninterruptable Power Supplies
- Solar Energy
- Industrial Motor Drives
- Appliances
- Laser Drivers
- Wireless Power Transfer
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