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GaN Systems - GS66516T-MR
For Demanding High-Power Applications

GaN in Stock: GaN Systems 650V, 60A, 25mΩ Power Transistor

The GS66516T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a small package. The GS66516T is a top-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • Ultra-low FOM Island Technology® die
  • Low inductance GaNPX® package
  • Simple gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 / +10 V )
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 9 x 7.6 mm2 PCB footprint
  • Dual gate pads for optimal board layout
  • RoHS 3 (6+4) compliant
  • AC-DC Converters
  • DC-DC Converter
  • Bridgeless Totem Pole PFC
  • Inverters
  • Energy Storage Systems
  • On Board Battery Chargers
  • Uninterruptible Power Supplies
  • Solar Energy
  • Industrial Motor Drives
  • Laser Drivers
  • Traction Drive
  • Wireless Power Transfer

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Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.