- Mfg Part Number: GS-065-060-5-B-A-MR
The GS-065-060-5-B-A is an Automotive-grade 650 V E-mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package.
The GS-065-060-5-B-A is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
Related Content
HARMAN Delivers Fast-Charging, Pocket-Sized 4-Port 100W GaN Charger Powered by GaN Systems
The New GaN-Powered Wall Charger Delivers Breakthroughs in Power Efficiency, Charging Speeds, and Sustainability
GaN Systems – GS-065-018-2-L
GaN Systems Launches New Higher Performance, Low-Cost Transistor for Consumer, Industrial, and Data Center Applications.
GaN Systems Automotive-grade 650 V, 25 mΩ GaN E-HEMT
The GS-065-060-5-T-A is an Automotive-grade 650 V enhancement mode GaN-on-Silicon power transistor.
