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Gen2 650 V GaNPX® Packaging Power Transistors
From GaN Systems

Gen2 650 V GaNPX® Packaging Power Transistors

The new GaN transistors GS-065-060-3-B/T, available from Richardson RFPD, provide low RDS(on) (25 mΩ) and feature a 60A IDS rating and GaN Systems’ Island Technology® cell layout for high-current die performance and yield. Offered in GaNPX® package, GS-065-060-3-B/T feature an updated design.

The advantages of low cost, design flexibility, and improved performance meet new demands from wide-ranging applications, including AC/DC and DC/DC high power density power supply, bridgeless totem pole PFC, power inverters, industrial motor drives and wireless power transfer.

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GS-065-060-3-B

Bottom-side cooled

GaN Systems

GS-065-060-3-T

Top-side cooled

GaN Systems

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About our Team of Experts

Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.