- Mfg Part Number: GS-065-011-2-L-MR
The GS-065-011-2-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield. The GS-065-011-2-L is a bottom-side cooled transistor that offers low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
- Features
- 650 V enhancement mode power transistor
- Bottom-cooled 8×8 mm PDFN package
- RDS(on) = 150 mOhm
- IDS(max) = 11 A
- Ultra-low FOM
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- High switching frequency (> 1 MHz)
- Fast and controllable fall and rise times
- Reverse conduction capability
- Zero reverse recovery loss
- Source Sense (SS) pin for optimized gate drive
- RoHS 3 (6+4) compliant
- Applications
- Consumer and Industrial Power Supplies
- Power Adapters
- LED Lighting Drivers
- Fast Battery Charging
- Power Factor Correction
- Appliance and Industrial Motor Drives
- Wireless Power Transfer
Related Content
HARMAN Delivers Fast-Charging, Pocket-Sized 4-Port 100W GaN Charger Powered by GaN Systems
The New GaN-Powered Wall Charger Delivers Breakthroughs in Power Efficiency, Charging Speeds, and Sustainability
GaN Systems – GS-065-018-2-L
GaN Systems Launches New Higher Performance, Low-Cost Transistor for Consumer, Industrial, and Data Center Applications.
GaN Systems Automotive-grade 650 V, 25 mΩ GaN E-HEMT
The GS-065-060-5-T-A is an Automotive-grade 650 V enhancement mode GaN-on-Silicon power transistor.