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GaN Systems - GS-065-011-2-LX
Reduce the Cost Per Watt in 45W to 150W Applications

In Stock: 8x8mm PDFN Package GaN Transistors

The GS-065-011-2-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield. The GS-065-011-2-L is a bottom-side cooled transistor that offers low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • 650 V enhancement mode power transistor
  • Bottom-cooled 8×8 mm PDFN package
  • RDS(on) = 150 mOhm
  • IDS(max) = 11 A
  • Ultra-low FOM
  • Simple gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 V / +10 V)
  • High switching frequency (> 1 MHz)
  • Fast and controllable fall and rise times
  • Reverse conduction capability
  • Zero reverse recovery loss
  • Source Sense (SS) pin for optimized gate drive
  • RoHS 3 (6+4) compliant
  • Consumer and Industrial Power Supplies
  • Power Adapters
  • LED Lighting Drivers
  • Fast Battery Charging
  • Power Factor Correction
  • Appliance and Industrial Motor Drives
  • Wireless Power Transfer

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About our Team of Experts

Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.