The PCEVBUM2878 and PCEVBUM2880 are evaluation boards designed for evaluation of onsemi’s 1200V M3S full bridge (PCEVBUM2878) and half bridge (PCEVBUM2880) Silicon Carbide power modules.
The purpose of the evaluation board is double pulse switching test and open loop power test of onsemi full bridge modules.
1200 V M3S 2-Pack and 4-Pack SiC MOSFET Module Evaluation Boards
These products use SiC M3S technology to be fast and rugged and include system benefits from high efficiency to reduced system size and cost.
The 2-Pack and 4-Pack modules are managed by isolated single gate drivers, offering 2.5 kV RMS insulation between the primary and secondary sides. An isolated DC/DC source supplies the gate drive voltage. The board features an integrated DC-link with the flexibility to incorporate various types of film capacitors. Additionally, the evaluation board can connect to an external controller that provides PWM inputs and manages fault signals.
Features
- 4 Layer FR4 PCB with 70 μm Copper Thickness
- High Thermal Emissivity − Black PCB Color
- 4 Isolated Single Gate Drivers with 2.5 kV Insulation
- Connector Base for Input and Output Signals
- Integrated Film DC−link
- Mounting Holes for Connection Rogowski Coil and Measurement Probes
- Low Inductance PCB Layout
Applications
These products are used in energy infrastructure applications such as PV inverters, UPS, or EV chargers to improve efficiency and power density compared with IGBT or super junction MOSFET solutions.
User Manuals
The user manuals noted below describe the board function, board layout and application test description. It includes details of layout, schematics, and bill of materials.
Evaluation Boards | Part Number | 4PACK Modules
| Availability
|
 Full Bridge PCEVBUM2878 | NXH011F120M3F2P | Silicon Carbide (SiC) Module, EliteSiC, 11 mohm, 1200 V, SiC M3S MOSFET, Full Bridge, F2 Package | Order / Learn More |
NXH007F120M3F2PTHG | Silicon Carbide (SiC) Module – EliteSiC, 7 mohm, 1200 V, SiC M3S MOSFET, Full Bridge, F2 Package | Order / Learn More | |
Half Bridge PCEVBUM2880 | NXH008P120M3F1PTG | Silicon Carbide (SiC) Module, 8 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package | Order / Learn More |
NXH010P120M3F1PTG | Silicon Carbide (SiC) Module, 10 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package | Order / Learn More | |
NXH015P120M3F1PTG | Silicon Carbide (SiC) Module 15 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package | Order / Learn More | |
NXH030P120M3F1PTG | Silicon Carbide (SiC) Module 30 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package | Order / Learn More |
NOTE: The boards must be used in lab environment only and must be operated by skilled personal trained on all safety standards. Please contact Richardson RFPD’s application engineering team to discuss how these boards can assist in your evaluation of onsemi’s specified SiC modules.
Additional onsemi Technology
