Robust, High-Current Handling T10 Power MOSFETs

A more efficient, powerful and reliable Silicon MOSFET solution
onsemi PowerTrench® MOSFETs (T10) Technology

onsemi PowerTrench® MOSFETs (T10) Technology

onsemi’s T10 series of mid-voltage power MOSFETs offer several benefits for fast-switching DC-DC and motor control applications, including high power dissipation, enhanced thermal performance and a small footprint for high power density designs.

More Efficient, Powerful & Reliable Technology

Achieve Higher Power Density​

30%-40% Rsp Reduction vs. Previous Tech

Reduce Switching Losses & Improve Efficiency​

2X Reduction in Qg, Qsw, and Qoss

Reduce Ringing, Overshoot & EMI/Noise​

Softer Recovery Diode and Lower Qrr​

Achieve Higher Reliability & Robustness​

10% Higher UIS Capability​

T10 Optimized - Technology

T10S Fast-Switching DC-DC Applications

  • Improved FOM
  • Higher efficiency Lower Qg
  • Less driving loss Lower Qsw
  • Less switching loss​
  • Lower Qoss – Less charge/discharge loss
  • Lower Qrr – Less reverse recovery loss​
  •  

T10M Motor Control Applications

  • Minimizing Parametric Variation Lower RDS(on)
  • Less conduction loss Lower Qg
  • Less driving loss​
  • Excellent Body-Diode Softness
  • Less voltage spike Higher UIS Capability
  • More reliable​
Part Number
Pkg.
VDS (V)​
VGS (V)​
RDS (ON)Max (mΩ)​
NTMFS0D5N04XL
SO8-FL 5×6
40
20
0.49
NTMFS0D7N04XL
SO8-FL 5×6
40
20
0.68
NTMFS0D9N04XL
SO8-FL 5×6
40
20
0.9
NTMFS0D4N04XM
SO8-FL 5×6
40
20
0.42
NTMFS0D5N04XM
SO8-FL 5×6
40
20
0.52
NTMFS0D7N04XM
SO8-FL 5×6
40
20
0.7
NTMFS0D9N04XM
SO8-FL 5×6
40
20
0.92
NTMFS1D1N04XM
SO8-FL 5×6
40
20
1.1
NTMFS1D3N04XM
SO8-FL 5×6
40
20
1.3
NTMFWS1D5N08X
SO8-FL 5×6
80
20
1.5
NTMFS2D1N08X
SO8-FL 5×6
80
20
2.1
NTMFS2D5N08X
SO8-FL 5×6
80
20
2.5
NTMFS3D0N08X
SO8-FL 5×6
80
20
3
NTMFS3D5N08X
SO8-FL 5×6
80
20
3.5
NTMFS4D0N08X
SO8-FL 5×6
80
20
4
NTBLS0D8N08X
TOLL 10×12
80
20
0.8

Energy & Power Design Support

Allow us an opportunity to assess your project and help bring your vision to market faster.

About our Team of Experts

Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.