Tagore Portfolio of GaN FETs with Integrated Driver

Suitable for customers to build high power density and high efficiency AC/DC converters.
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GaN FETs with Integrated Driver Provide Ease of Use and Reliability

GaN FETs with Integrated Driver Provide Ease of Use and Reliability

Tagore’s portfolio of GaN FET integrated with an IC driver are suitable for customers to build high power density and high efficiency AC/DC converters. Tagore’s GaN FETs are particularly suitable for realizing a bridgeless totem pole PFC where one half bridge is composed of GaN FET’s and the other half bridge is composed of MOSFET’s. Tagore GaN FETs with drivers are ideally suited for DC/DC converter applications such as in LLC or Phase Shifted Full Bridge (PSFB) topologies and for secondary side Synchronous rectification when the output voltage is high, such as the case of a Electric Vehicle (EV) battery charger.
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Monolithically Integrated GaN FET + Driver

The devices make applications more efficient/reliable, and also reduces the size of the magnetic components dramatically.

Part Number
Description
Availability
TP44100NM
90mΩ, 650V GaN HEMT device with integrated driver circuit
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TP44200NM
180mΩ, 650V GaN HEMT device with integrated driver circuit
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TP44400NM
360mΩ, 650V GaN HEMT device with integrated driver circuit
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TP44500NM
450mΩ, 650V GaN HEMT device with integrated driver circuit
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GaN HEMT With Integrated Driver and Protection

TP44200NM, TP44200NMTRPBF, TP44400NM, TP44500NM

GaN HEMT With Integrated Driver and Protection

  • 650V enhancement mode HEMT with integrated driver
  • 180mΩ RDSON
  • 5V PWM input
  • UVLO protection
  • Zero reverse recovery
  • Low quiescent current driver
  • Adjustable turn-on slew rate
  • Dv/Dt immunity both with/without driver-supply
  • Low propagation delay for up to 2MHz operation

    • SUPERIOR GaN

    The devices have low input/output capacitances which allows switching at high frequency with minimum loss. Due to its high breakdown voltage and high reliability, it can be safely used to improve efficiency and power density while bringing down overall system cost at the same time.

    Part Number
    Description
    Availability
    TP44100SG
    90mΩ, 650V GaN power HEMT device
    Order / Learn More
    TP44200SG
    180mΩ, 650V GaN power HEMT device
    Order / Learn More
    TP44400SG
    360mΩ, 650V GaN power HEMT device
    Order / Learn More

    SUPERIOR GaN

    TP44100SG, TP44200SG, TP44400SG

    SUPERIOR GaN

  • Adapt to various PWM controllers
  • Zero reverse recovery
  • Adjustable turn-on slew rate
  • High switching frequency (>2MHz)
  • Reverse conduction capable
  • Enhanced thermal performance with NC center pad
  • Simple and low cost interface circuit
  • Direct PWM drive, no external VCC needed

    • Energy & Power Design Support

    Allow us an opportunity to assess your project and help bring your vision to market faster.

    Ask an Expert

    About our Team of Experts

    Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.
     
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