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Vincotech - 10-EY124PA016ME
1200V, 16mΩ SiC Module in Compact, Low-inductive Design

Vincotech – 10-EY124PA016ME

SiC In Stock: 1200V, 16mΩ SiC Module in Compact, Low-inductive Design
  • Compact and low inductive design
  • High frequency SiC MOSFET
  • Integrated NTC
  • Kelvin Emitter for improved switching performance
  • Open Emitter configuration
  • Temperature sensor
  • High Blocking Voltage with low drain source on state resistance
  • High speed SiC-MOSFET technology
  • Resistant to Latch-up
  • Convex shaped substrate for superior thermal contact
  • Compact design
  • CTI600 Housing material
  • Thermo-mechanical push-and-pull force relief
  • Reliable cold welding connection to PCB
  • No PCB hole damage to enable reuse
  • Charging Stations
  • Power Supply
  • Welding and Cutting

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Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.