Thermal Characterization of GaN Systems E-HEMTs

Thermal Characterization of GaN Systems E-HEMTs

May 17, 2021

Gallium Nitride

Just how easy is it to characterize the junction temperature of GaN Systems devices? In this Tech Chat, temperature measurement using Long-wave Infrared (LWIR) cameras is discussed.

Related Content

Energy & Power Design Support

Allow us an opportunity to assess your project and help bring your vision to market faster.

About our Team of Experts

Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.