Exciting New GaN MMIC and GaN HEMT Devices for Communications, Aerospace & Defense

Wednesday, December 15, 2021

As both frequencies of operation and desired output power continue to rise, the size and cost of gallium arsenide for RF MMICs has become a limiting factor. Gallium nitride, with its higher power density, high thermal capability and efficiency, is supplanting GaAs as the technology of choice for RF MMICs in radar, EW, satellite and 5G communications and more.

The webinar provides an overall understanding of this technology transition and explores a variety of devices from one vendor that serve a multiplicity of application in the A&D and commercial space.

Key Takeaways

  • Achieve higher efficiencies for your radar systems
  • Drive wider bandwidths for your MILCOM radio systems
  • Meet linearity specs for high order modulations used in satellite communications
  • Deliver higher power for avionics and L band radar systems using GaN HEMT transistors
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